17 Ω cm, respectively. The removal of organic ligand after ligand exchange induces lower resistivity and improves the electronic properties of CZTSe NC thin films. Figure 4 shows the Mott-Schottky plots for the CZTSe NC thin films by selenization before and after ligand exchange in 1 M NaOH solution. The CZTSe thin films show p-type conductivity from the negative slope of the Mott-Schottky plot [31, 32]. According to the Mott-Schottky equation [31], Table 1 Energy level and resistivity of CZTSe NC thin films before and after ligand exchange by 550°C selenization

Samples ρ(Ω cm) E LUMO (eV) E HOMO (eV) E gap (eV) a Before exchange (550°C) 3.09 −3.95 −5.57 1.62 After exchange (550°C) 0.17 −4.37 −5.91 1.54 aDetermined by CV, |E’ox − E’red|. Figure 4 Mott-Schottky plots for CZTSe NC thin films before and after ligand exchange by this website www.selleckchem.com/products/MGCD0103(Mocetinostat).html 550°C selenization. (1) where

ϵ is the relative permittivity (dielectric constant) of the CZTSe films, ϵ 0 is the vacuum permittivity, e is the elementary charge of an electron, N D is the donor density in CZTSe films, E fb is the flat-band potential, k is the Boltzmann constant, and T is the temperature; the carrier concentration is inversely proportional to the slope of 1/C −2 vs. E. It can be seen that the slope of CZTSe films after ligand exchange is smaller than that before ligand exchange, indicating that the carrier concentration increases after ligand exchange and the conductivity of CZTSe NC thin films would be improved. The values of HOMO and LUMO energy levels of the materials are crucial for their applications in optoelectronic devices such as solar cells. CV has been utilized to estimate the HOMO energy level (or ionization potential I p) and the LUMO energy level (or electron affinity E a) of semiconductor materials [33–36]. The HOMO and LUMO energy levels can be calculated from the onset oxidation potential (E’ox) and onset reduction potential (E’red), respectively, according to Equations 2 and 3 [37, 38]: (2) (3) where the onset potential values are relative Molecular motor to a Ag/Ag+ reference electrode. Figure 5a compares

the cyclic voltammograms of NC thin films before and after ligand exchange by selenization. Cyclic voltammograms were carried out in 0.1 M TBAPF6/DMF at 50 mV s−1 scan rate. As shown in Figure 5a, relative to the Ag/Ag+ reference electrode, the onset oxidation and reduction potentials of thin films are 0.86 and −0.76 V, respectively, for the thin film by selenization before ligand exchange and 1.2 and −0.34 V, respectively, for the thin film by selenization after ligand exchange. The bandgap (E gap) values calculated from the CV Selleckchem Batimastat measurements are shown in Table 1. The bandgap is about 1.62 eV before ligand exchange. The bandgap is about 1.54 eV after ligand exchange. The removal of large organic molecules is of great benefit to crystallization after annealing treatment [29]. It can be seen in Figure 3a that the film has better crystallinity after ligand exchange by 550°C selenization.