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in an Al 0.4 Ga 0.6 N/GaN heterostructure. J Appl Phys 2003, 93:2055.CrossRef 42. Juang JR, Huang T-Y, Chen T-M, Lin M-G, Kim G-H, Lee Y, Liang C-T, Hang DR, Chen YF, Chyi J-I: Transport in a gated Al 0.18 Ga 0.82 N/GaN electron system. J Appl Phys 2003, 94:3181.CrossRef 43. Cho KS, Huang T-Y, Huang CP, Chiu YH, Liang C-T, Chen YF, Lo I: Exchange-enhanced g-factors in an Al 0.25 Ga 0.75 N/GaN two-dimensional electron system. J Appl Phys 2004, 96:7370.CrossRef 44. Cho KS, Liang C-T, Chen YF, Tang YQ, Shen B: Spin-dependent photocurrent induced by Rashba-type spin splitting in Al 0.25 Ga 0.75 N/GaN heterostructures. Meloxicam Phys Rev B 2007, 75:085327.CrossRef 45. Liang C-T, Simmons MY, Smith CG, Kim GH, Ritchie DA, Pepper M: Spin-dependent transport in a clean one-dimensional channel. Phys Rev B

1999, 60:10687.CrossRef 46. Huckestein B: Quantum Hall effect at low magnetic fields. Phys Rev Lett 2000, 84:3141.CrossRef Competing interests The authors declare that they have no competing interests. Authors’ contributions FHL, CSH, CC, TPW, and LIH performed the experiments. FHL, YF, YY, and REE fabricated the device. REE and CTL coordinated the project. TPW and STL provided key interpretation of the data. FHL and CTL drafted the paper. All the authors read and approved the final manuscript.”
“Background In modern materials science, considerable attention has been paid to the precise manipulation and development of new user-friendly methods for fabricating a range of inorganic systems in the nanoscale region. Among these inorganic systems, bifunctional magnetic-luminescent composites are particularly attractive because of their unique magnetic and luminescent properties in combination in a single particle. Each bifunctional particle normally has a paramagnetic core structural domain covered by a luminescent shell domain.

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